A Detailed Review of Partial Discharge Detection Methods for SiC Power Modules Under Square-Wave Voltage Excitation
Abstract
:1. Introduction
2. Standard Measurement Setups for PD Diagnoses in Power Modules
3. PD Detection in Power Modules Under Square Wave Voltage Excitation
3.1. Optical Methods for PD Detection
3.1.1. Photomultiplier Tube Method (PMT)
3.1.2. Silicon Photomultiplier Method (SiPM)
3.1.3. Fluorescent Fiber Method
3.1.4. Charged Coupled Device (CCD) Method
- Advantages: These techniques include high sensitivity to PD events and good resistance to electromagnetic interference (EMI), which is useful in loud surroundings.
- Disadvantages: It requires dark circumstances to eliminate light interference; it requires costly and sophisticated installations; and it is best suited for scientific settings.
3.2. Electromagnetic Detection Method
3.2.1. Antenna Method
3.2.2. Down Mixing Partial Discharge Detection
- Advantages: Good flexibility to industrial conditions, effective in high-speed switching applications, and acceptable noise resistance.
- Disadvantages: Susceptible to disturbance in high-EMI situations; requires precise antenna design to maintain bandwidth and sensitivity.
3.3. Electrical Detection Method
3.3.1. High-Frequency Current Transformer (HFCT)
3.3.2. Double HFCTs
- Advantages: Low cost, widespread industrial application, and sensitivity to high-frequency PD signals.
- Disadvantages: Noise-prone, particularly at high switching frequencies common to SiC modules; additional filters may be required in EMI-heavy circumstances.
3.4. Ultrasound Method for Detection
- Advantages: Small and simple to use, non-invasive, suited for field applications.
- Disadvantages: Limited flexibility and might have difficulty with accuracy and noise in real-world scenarios as compared to other approaches.
- Optical Methods: These are usually restricted to laboratory environments and offer great sensitivity and good noise immunity, but they require expensive and complicated setups (e.g., dark rooms). When highly accurate measurements are needed and noise interference is not a significant issue, optical techniques like PMT and SiPM perform well in research and development settings. These methods provide excellent accuracy, which is especially useful in high-sensitivity areas such as research and laboratory settings. Their high cost and complex implementation make them unsuitable for ordinary applications, but they stand out when accurate detection is required.
- Electromagnetic Methods: Because of its ability to adopt different sizes and requirements and reasonable noise resistance, this category is perfect for real-world industrial applications, it may not function well in settings with a lot of electromagnetic interference (EMI). In industrial applications like automotive electronics or renewable energy power conversion, where high-speed photodetector detection is required, electromagnetic methods (especially those based on antennas) are well-suited for widespread implementation. These methods provide moderate accuracy and are ideal for industrial applications, particularly in areas with high electromagnetic interference (EMI). They achieve a compromise between cost and ease of deployment, allowing for simple integration into bigger systems while retaining reliable performance.
- Electrical Methods: Due to their great sensitivity and affordability, these methods are frequently employed in industry. They are more susceptible to noise, though, especially at the high switching frequencies that SiC power modules are known for. While generally scalable, electrical detection techniques like the HFCT are less ideal in EMI-heavy situations without additional noise filtering. The HFCT is a standard technique in industrial maintenance and diagnostics of high-power systems. This category has lower accuracy than previous methods. However, their low cost and simplicity of implementation make them useful for high-frequency situations where other methods may fail. They are especially effective in conditions where great sensitivity is not required.
- Ultrasound Methods: Although inexpensive and simple to construct, these approaches have limited scalability and are best suited for field applications requiring a compact and non-invasive detection system. They can be effective in detecting localized PD, but they may be less precise than other approaches. With high accuracy, these approaches are simple to implement and suited for field applications, particularly in acoustic-based settings. They can function efficiently in a range of environments, integrating simplicity of use with reliable detecting capabilities.
4. Future Directions
4.1. AI and Machine Learning Integration:
4.2. Hybrid PD Detection Techniques
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
- Mitsudome, H.; Akinaga, Y.; Kozako, M.; Hikita, M.; Ikeda, Y.; Taniguchi, K.; Nakamura, Y.; Okamoto, K. High accuracy partial discharge location in power module using multiple loop sensors. In Proceedings of the 2017 IEEE International Workshop on Integrated Power Packaging (IWIPP), Delft, The Netherlands, 5–7 April 2017; pp. 1–5. [Google Scholar]
- Zeng, Z.; Wang, J.; Wang, L.; Yu, Y.; Ou, K. Inaccurate switching loss measurement of SiC MOSFET caused by probes: Modelization, characterization, and validation. IEEE Trans. Instrum. Meas. 2021, 70, 1002014. [Google Scholar] [CrossRef]
- Romano, P.; Viola, F.; Miceli, R.; Spataro, C.; D’Agostino, B.; Imburgia, A.; La Cascia, D.; Pinto, M. Partial discharges on IGBT modules: Are sinusoidal waveforms sufficient to evaluate behavior. In Proceedings of the IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Des Moines, IA, USA, 19–22 October 2014; pp. 224–227. [Google Scholar]
- Zhang, J. Power electronics in future electrical power grids. In Proceedings of the 2013 4th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG), Rogers, AR, USA, 8–11 July 2013; pp. 1–3. [Google Scholar]
- Agarwal, A.K. An overview of Sic Power Devices. In Proceedings of the International Conference on Power, Control and Embedded Systems, Allahabad, India, 29 November–1 December 2010; pp. 1–4. [Google Scholar]
- Shenai, K.; Scott, R.S.; Baliga, B.J. Optimum semiconductors for high-power electronics. IEEE Trans. Electron Devices 1989, 36, 1811–1823. [Google Scholar] [CrossRef]
- Xue, H.; He, Q.; Jian, G.; Long, S.; Pang, T.; Liu, M. An overview of the ultrawide bandgap Ga2O3 semiconductor-based schottky barrier diode for power electronics application. Nanoscale Res. Lett. 2018, 13, 290. [Google Scholar] [CrossRef] [PubMed]
- Jagodzinski, H.; Arnold, H. The crystal structures of silicon carbide. In Silicon Carbide, A High Temp Semiconductor; O’Connor, J.R., Smiltens, J., Eds.; Pergamon Press: Oxford, UK, 1960; p. 136. [Google Scholar]
- Zhou, W.; Zhong, X.; Sheng, K. High temperature stability and the performance degradation of SiC MOSFETs. IEEE Trans. Power Electron. 2014, 29, 2329–2337. [Google Scholar] [CrossRef]
- Habersat, D.B.; Green, R.; Lelis, A.J. Permanent and transient effects of high-temperature bias stress on Room-temperature VT drift measurements in SiC power MOSFETs. In Proceedings of the 2019 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 31 March–4 April 2019; pp. 1–4. [Google Scholar]
- Domeij, M.; Franchi, J.; Buono, B.; Lee, K.; Park, K.-S.; Choi, C.-S.; Sunkari, S.; Das, H. Avalanche rugged 1200 V 36 m SiC MOSFETs with state-of-the-art threshold voltage stability. In Proceedings of the 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Atlanta, GA, USA, 31 October–2 November 2018; pp. 114–117. [Google Scholar]
- Puschkarsky, K.; Grasser, T.; Aichinger, T.; Gustin, W.; Reisinger, H. Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability. IEEE Trans. Electron Devices 2019, 22, 4604–4616. [Google Scholar] [CrossRef]
- Mitsudome, H.; Akinaga, Y.; Matsuo, K.; Kozako, M.; Hikita, M.; Ikeda, Y.; Taniguchi, K.; Nakamura, Y.; Okamoto, K. Basic study on partial discharge location in power module. In Proceedings of the 2016 IEEE International Conference on Dielectrics (ICD), Montpellier, France, 3–7 July 2016; pp. 451–454. [Google Scholar]
- Takahashi, K.; Tobishima, S.; Takahashi, Y.; Doi, T. Reliability Introduction of Energy Devices; Nikkan Kogyo Shimbun, Ltd.: Tokyo, Japan, 2014; pp. 125–193. [Google Scholar]
- Suganuma, K. SiC/GaN Power Semiconductor of Implementation and Reliability Evaluation Technology; Nikkan Kogyo Shimbun, Ltd.: Tokyo, Japan, 2014; pp. 15–59. [Google Scholar]
- Alves, L.F.S.; Lefranc, P.; Jeannin, P.; Sarrazin, B. Review on sic-mosfet devices and associated gate drivers. In Proceedings of the IEEE International Conference on Industrial Technology (ICIT), Lyon, France, 20–22 February 2018; pp. 824–829. [Google Scholar]
- Madonia, A.; Romano, P.; Hammarstrom, T.; Gubanski, S.M.; Viola, F.; Imburgia, A. Partial discharge of gel insulated high voltage power modules subjected to unconventional voltage waveforms. In Proceedings of the IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Toronto, ON, Canada, 16–19 October 2016; pp. 231–234. [Google Scholar]
- Sato, M.; Kumada, A.; Hidaka, K.; Yamashiro, K.; Hayase, Y.; Takano, T. Surface discharges in silicone gel on AlN substrate. IEEE Trans. Dielectr. Electr. Insul. 2016, 23, 494–500. [Google Scholar] [CrossRef]
- Sato, M.; Kumada, A.; Hidaka, K.; Yamashiro, K.; Hayase, Y.; Takano, T. On the nature of surface discharges in silicone-gel: Prebreak down discharges in cavities. In Proceedings of the Electrical Insulation and Dielectric Phenomena (CEIDP), Des Moines, IA, USA, 19–22 October 2014; pp. 19–22. [Google Scholar]
- Zhou, N.; Luo, L.; Chen, J.; Sheng, G.; Jiang, X. Error correction method based on multiple neural networks for UHF partial discharge localization. IEEE Trans. Dielectr. Electr. Insul. 2017, 24, 3730–3738. [Google Scholar] [CrossRef]
- Kong, X.; Liu, H.-J.; Xie, Y.-Z.; Guo, J.; Liu, Q.; Chen, Y.-H.; Wang, S.-F.; Sun, X.-M. High-voltage circuit-breaker insulation fault diagnosis in synthetic test based on noninvasive switching electric-field pulses measurement. IEEE Trans. Power Deliv. 2015, 31, 1168–1175. [Google Scholar] [CrossRef]
- Yan, Q.; Yuan, X.; Geng, Y.; Charalambous, A.; Wu, X. Performance evaluation of split output converters with SiC MOSFETs and SiC Schottky diodes. IEEE Trans. Power Electron. 2017, 32, 406–422. [Google Scholar] [CrossRef]
- Pensl, G.; Choyke, W.J. Electrical and optical characterization of SiC. Phys. Rev. B 1993, 185, 264. [Google Scholar]
- Lutz, J.; Baburske, R. Some aspects of ruggedness of SiC power devices. Microelectron. Reliab. 2014, 54, 49–56. [Google Scholar] [CrossRef]
- IEC 60270; High-Voltage Test Techniques—Partial Discharge Measurements. International Electrotechnical Commission: Geneva, Switzerland, 2000.
- Romano, P.; Hammarstrom, T.; Bengtsson, T.; Imburgia, A.; Madonia, A.; Viola, F.; Gubanski, S.M. Partial discharges at different voltage waveshapes: Comparison between two different acquisition systems. IEEE Trans. Dielectr. Electr. Insul. 2018, 25, 540–593. [Google Scholar] [CrossRef]
- Bayer, C.F.; Waltrich, U.; Soueidan, A.; Schletz, A. Partial discharges in ceramic substrates-correlation of electric field strength simulations with phase resolved partial discharge measurements. Trans. Jpn. Inst. Electron. Packag. 2016, 9, 530–535. [Google Scholar] [CrossRef]
- Frey, D.; Schanen, J.L.; Auge, J.L. Electric field investigation in high voltage power modules using finite element simulations and partial discharge measurements. In Proceedings of the IEEE 38th Industry Applications Society (IAS) Meeting, Salt Lake City, UT, USA, 12–16 October 2003; pp. 1000–1005. [Google Scholar]
- Guo, Z.; Huang, A.Q.; Feng, X. Comparison of Partial Discharge Characterizations under 60 Hz Sinusoidal Waveform and High frequency PWM Waveform. In Proceedings of the IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, 9–13 October 2022; pp. 1–6. [Google Scholar]
- Nakamura, S.; Kumada, A.; Hidaka, K.; Sato, M.; Hayase, Y.; Takano, S.; Yamashiro, K.; Takano, T. Electrical treeing in silicone gel under repetitive voltage impulses. IEEE Trans. Dielectr. Electr. Insul. 2019, 26, 1919–1925. [Google Scholar] [CrossRef]
- Han, X.; Zheng, L.; Kandula, R.P.; Kandasamy, K.; Divan, D.; Saeedifard, M. Characterization of 3.3-kV reverse-blocking SiC modules for use in current-source zero-voltage-switching converters. IEEE Trans. Power Electron. 2021, 36, 392–843. [Google Scholar] [CrossRef]
- Dalal, D.N.; Christensen, N.; Jorgensen, A.B.; Jorgensen, J.K.; Beczkowski, S.; Munk-Nielsen, S.; Uhrenfeldt, C. Impact of power module parasitic capacitances on medium voltage SiC MOSFETs switching transients. IEEE J. Emerg. Selet. T. Power Eletron. 2020, 8, 298–310. [Google Scholar]
- Fu, P.; Zhao, Z.; Cui, X.; Wen, T.; Wang, H.; Li, X.; Zhang, P. Partial discharge measurement and analysis in high voltage IGBT modules under DC voltage. CSEE J. Power Energy Syst. 2018, 4, 513–523. [Google Scholar] [CrossRef]
- Abdelmalik, A.A.; Nysveen, A.; Lundgaard, L. Influence of fast rise voltage and pressure on partial discharges in liquid embedded power electronics. IEEE Trans. Dielectr. Electr. Insul. 2015, 22, 2242–2339. [Google Scholar] [CrossRef]
- Auge, J.L.; Lesaint, O.; Thi, A.V. Optical measurement of partial discharges under impulse voltage on ceramic substrates embedded in silicone oil. In Proceedings of the IEEE CEIDP, Shenzhen, China, 20–23 October 2013; pp. 1294–1297. [Google Scholar]
- Xiong, H.; Zhao, Z.; Cui, X.; Wen, T.; Wang, H.; Li, X.; Zhang, P. The Ohio State University partial discharge detection platform for electric machine windings driven by PWM voltage excitation. In Proceedings of the IEEE EIC, Calgary, AI, Canada, 16–19 June 2019; pp. 517–520. [Google Scholar]
- Zhou, J.; Ren, M.; Huang, W.; Zhang, C.; Dong, M.; Schichler, U. Partial discharge multispectral detection in air with a SiPM-based sensor. In Proceedings of the ICPADM, Xi’an, China, 20–24 May 2018; pp. 234–237. [Google Scholar]
- Zhang, C.; Xu, Y.; Dong, M.; Burgos, R.; Ren, M.; Boroyevich, D. Design and Assessment of External Insulation for Critical Components in a Medium Voltage SiC-Based Converter via Optical Method. IEEE Trans. Power Electron. 2020, 35, 12843–12897. [Google Scholar] [CrossRef]
- Zang, Y.; Niasar, M.G.; Qian, Y.; Zhou, X.; Sheng, G.; Jiang, X.; Vaessen, P. Optical detection method for partial discharge of printed circuit boards in electrified aircraft under various pressures and voltage. IEEE Trans. Transport. Electrific. 2022, 8, 4668–4677. [Google Scholar] [CrossRef]
- Semenov, I.; Gunheim, I.F.; Niayesh, K.; Meyer, H.K.H.; Lundgaard, L. Investigation of Partial Discharges in AlN Substrates Under Fast Transient Voltages. IEEE Trans. Dielectr. Electr. Insul. 2022, 29, 305–312. [Google Scholar] [CrossRef]
- Li, J.; Wang, P.; Jiang, T.; Bao, L.; He, Z. UHF stacked hilbert antenna array for partial discharge detection. IEEE Trans. Antennas Propag. 2013, 61, 5358–5361. [Google Scholar] [CrossRef]
- Cui, Z.; Park, S.; Choo, H.; Jung, K.-Y. Wideband UHF Antenna for Partial Discharge Detection. Appl. Sci. 2020, 10, 1698. [Google Scholar] [CrossRef]
- Ardiansyah, N.P.; Khayam, U.; Nurdiansyah, R. Measurement of Partial Discharge on PCB using RC Detector, HFCT, and Loop Antenna. In Proceedings of the FORTEI-International Conference on Electrical Engineering (FORTEI-ICEE), Bandung, Indonesia, 23–24 September 2020; pp. 64–68. [Google Scholar]
- Wang, Y.; Ding, Y.; Yuan, Z.; Peng, H.; Wu, J.; Yin, Y.; Han, T.; Luo, F. Space-Charge Accumulation and Its Impact on High-Voltage Power Module Partial Discharge Under DC and PWM Waves: Testing and Modeling. IEEE Trans. Power Electron. 2021, 36, 11097–11108. [Google Scholar] [CrossRef]
- Liu, X.; Li, X.; Li, C.; Cheng, J.; Liu, Z.; Zhao, Z.; Cui, X.; Wei, X.; Tang, X. Characteristics and Identification of Partial Discharge for Insulation Structures in High Voltage IGBT Modules Under Positive Square Wave Voltage. IEEE Trans. Power Electron. 2023, 38, 5347–5359. [Google Scholar] [CrossRef]
- Wang, H.; Xiao, G.; Wang, L.; Pei, Y.; Yan, F.; Yang, Q. A Novel Approach to Partial Discharge Detection Under Repetitive Unipolar Impulsive Voltage. IEEE Trans. Ind. Electron. 2023, 26, 11241–11251. [Google Scholar] [CrossRef]
- Akbar, G.; Imburgia, A.; Rizzo, G.; Di Fatta, A.; Kaziz, S.; Romano, P.; Ala, G.; Viola, F. Partial Discharge Behaviour Evaluation on MOSFET Employed in Automotive Applications. In Proceedings of the 2022 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Denver, CO, USA, 30 October–2 November 2022; pp. 337–340. [Google Scholar]
- Schober, B.; Schichler, U. Application of Machine Learning for Partial Discharge Classification under DC Voltage. In Proceedings of the 2019 Nordic Insulation Symposium on Materials, Components and Diagnostics (NORD-IS 19), Tampere, Finland, 12–14 June 2019. [Google Scholar]
Property | Si | SiC | GaN | Ga2O3 | Diamond |
---|---|---|---|---|---|
Band Gap Energy | 1.1 | 3.2 | 3.4 | 4.7 | 5.5 |
Breakdown Field (106 V/cm) | 0.3 | 3 | 3.5 | 8 | 13 |
Electron Mobility (103 cm2/V·s) | 1.3 | 0.9 | 1.5 | 0.3 | 2 |
Saturation Drift Velocity (107 cm/s) | 1 | 2 | 2.5 | 2 | 1.5 |
Thermal Conductivity (W/cm·k) | 1.5 | 3.7 | 1.3 | 0.1 | 22.9 |
Detection Method | Type of Method | Ref. | Noise Resistance | Cost | Ease of Implementation | Application Feasibility |
---|---|---|---|---|---|---|
Optical Methods | PMT SiPM Fluorescent Fiber CCD | [34,35,36] [37,38] [37,39] [40] [40] | Excellent | High | Complex | R&D, Laboratory Settings (high sensitivity critical) |
Electromagnetic Methods | Antenna Down-Mixing | [41,42,46,48] [43,44] | Moderate | Moderate | Easier | Industrial Settings (EMI-rich environments) |
Electrical Methods | HFCT Double HFCTs | [43,45] [40,43,45] | Low | Low | Moderate | High-frequency environments |
Ultrasound Methods | OFS | [27,46] | High | Moderate | Easy | Field Applications (acoustic-based setups) |
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content. |
© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Share and Cite
Akbar, G.; Di Fatta, A.; Rizzo, G.; Ala, G.; Romano, P.; Imburgia, A. A Detailed Review of Partial Discharge Detection Methods for SiC Power Modules Under Square-Wave Voltage Excitation. Energies 2024, 17, 5793. https://doi.org/10.3390/en17225793
Akbar G, Di Fatta A, Rizzo G, Ala G, Romano P, Imburgia A. A Detailed Review of Partial Discharge Detection Methods for SiC Power Modules Under Square-Wave Voltage Excitation. Energies. 2024; 17(22):5793. https://doi.org/10.3390/en17225793
Chicago/Turabian StyleAkbar, Ghulam, Alessio Di Fatta, Giuseppe Rizzo, Guido Ala, Pietro Romano, and Antonino Imburgia. 2024. "A Detailed Review of Partial Discharge Detection Methods for SiC Power Modules Under Square-Wave Voltage Excitation" Energies 17, no. 22: 5793. https://doi.org/10.3390/en17225793
APA StyleAkbar, G., Di Fatta, A., Rizzo, G., Ala, G., Romano, P., & Imburgia, A. (2024). A Detailed Review of Partial Discharge Detection Methods for SiC Power Modules Under Square-Wave Voltage Excitation. Energies, 17(22), 5793. https://doi.org/10.3390/en17225793