The Effect of Incremental Innovation and Switching-Over to Architectural Innovation on the Sustainable Performance of Firms: The Case of the NAND Flash Memory Industry
Abstract
:1. Introduction
2. Theoretical Background
2.1. Innovation Types
- Incremental innovation: Innovation that does not change the architecture and concept; however, improvements to cost and performance are achieved through innovation.
- Architectural innovation: Innovation via a change in architecture; however, this innovation does not change the product’s concept.
- Modular innovation: The technological concept is fundamentally changed; however, it does not change the product’s architecture.
- Radical innovation: Disruptive innovation with a new architecture and concept.
2.2. Dominant Design
2.3. Relationship of Market Leadership and Profit
3. Methodology and Data
3.1. Preparation Phase
3.2. Organization Phase
3.3. Reporting Phase and Trustworthiness
4. Results and Discussion
4.1. The Effect of Innovation Activities in Terms of Market Share
4.2. The Effect of Innovation Activities in Terms of Profit
5. Conclusions and Implications
Author Contributions
Funding
Conflicts of Interest
References
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Types | Activities |
---|---|
Incremental Innovation | Cost decreases/changing material or layout Scaling (shrinkage of NAND flash device to the next node) |
Architectural Innovation | Architectural change due to parallel to sequential access structure Design change from a planar to a vertical structure |
Modular Innovation | Development of MRAM, PRAM, ReRAM |
Radical Innovation | Development of non-silicon based memory |
Nodes | Technology Leader | Samsung | Toshiba | Micron | SK Hynix | Gap between 1st and 2nd |
---|---|---|---|---|---|---|
5X nm | Samsung | 0 | 1 | 8 | 14 | 1 month |
4X nm | Toshiba | 4 | 0 | N/A | 13 | 4 month |
3X nm | Micron | 4 | 7 | 0 | 13 | 4 month |
2X nm | Samsung | 0 | 4 | 2 | 4 | 2 month |
1X nm | Toshiba | 8 | 0 | 19 | 17 | 8 month |
16 nm | SK Hynix | 2 | 5 | 6 | 0 | 2 month |
24 layer | Samsung | 0 | N/A | N/A | N/A | N/A |
32 layer | Samsung | 0 | 15 | 20 | 20 | 15 month |
48 layer | Samsung | 0 | 5 | N/A | 16 | 5 month |
64 layer | Samsung | 0 | N/A | N/A | N/A | N/A |
Technology Ranking | 2007 | 2008 | 2009 | 2010 | 2011 | 2012 | 2013 | 2014 | 2015 | 2016 | Total-Profit | |||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
#1 Samsung | OPM | 3 | ||||||||||||||||||||||||||||||||||||||||
#2 Toshiba | OPM | 7 | ||||||||||||||||||||||||||||||||||||||||
#3 Micron | OPM | N/A | 10 | |||||||||||||||||||||||||||||||||||||||
#4 SK Hynix | OPM | 14 |
(a) | Capex (millions of dollars) | 2007 | 2008 | 2009 | 2010 | 2011 | 2012 | 2013 | 2014 | 2015 | 2016 |
---|---|---|---|---|---|---|---|---|---|---|---|
Samsung | 3500 | 3300 | 1100 | 3700 | 3000 | 3500 | 4000 | 2900 | 3300 | 4600 | |
Toshiba | 3500 | 3700 | 1000 | 2600 | 3500 | 2400 | 2150 | 2500 | 3000 | 3400 | |
Micron | 2300 | 2300 | 400 | 700 | 1800 | 1100 | 950 | 1300 | 1500 | 2500 | |
SK Hynix | 950 | 500 | 150 | 800 | 750 | 2000 | 1000 | 1100 | 1300 | 1600 | |
(b) | Revenue (millions of dollars) | ||||||||||
Samsung | 5864 | 4960 | 5419 | 7283 | 7842 | 7504 | 8700 | 9084 | 9826 | ||
Toshiba | 3832 | 3459 | 4339 | 6393 | 6140 | 6152 | 8196 | 7899 | 7399 | ||
Micron | 853 | 984 | 1161 | 2474 | 3349 | 3400 | 3858 | 4691 | 5142 | ||
SK Hynix | 2369 | 1450 | 1343 | 1864 | 2504 | 2295 | 3150 | 3185 | 3773 | ||
(c) | Total wafer production (thousands of wafers) | ||||||||||
Samsung | 2482 | 3733 | 4081 | 3884 | 4166 | 3781 | 3562 | 3636 | 4336 | 4720 | |
Toshiba | 1785 | 2870 | 2349 | 3093 | 3767 | 3977 | 4022 | 4662 | 5925 | 6617 | |
Micron | 883 | 1296 | 1104 | 1230 | 1489 | 2246 | 2276 | 2810 | 3045 | 3268 | |
SK Hynix | 1740 | 1551 | 739 | 980 | 1166 | 1656 | 1758 | 2123 | 2399 | 2621 | |
(d) | Total GB production (millions of units) | ||||||||||
Samsung | 805 | 1867 | 2405 | 3931 | 5810 | 7883 | 11,747 | 18,186 | 29,317 | 48,006 | |
Toshiba | 575 | 1457 | 2261 | 4278 | 7051 | 12,590 | 17,785 | 23,443 | 32,148 | 46,086 | |
Micron | 147 | 599 | 1090 | 1794 | 3706 | 5235 | 6492 | 10,810 | 13,641 | 15,934 | |
SK Hynix | 363 | 489 | 431 | 823 | 2027 | 2973 | 4228 | 6876 | 11,681 | 16,949 | |
(e) | Revenue per wafer (millions of dollars) | ||||||||||
Samsung | 2.4 | 1.3 | 1.3 | 1.9 | 1.9 | 2.0 | 2.4 | 2.5 | 2.3 | ||
Toshiba | 2.1 | 1.2 | 1.8 | 2.1 | 1.6 | 1.5 | 2.0 | 1.7 | 1.2 | ||
Micron | 1.0 | 0.8 | 1.1 | 2.0 | 2.2 | 1.5 | 1.7 | 1.7 | 1.7 | ||
SK Hynix | 1.4 | 0.9 | 1.8 | 1.9 | 2.1 | 1.4 | 1.8 | 1.5 | 1.6 |
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Kim, H.; Park, C.; Lee, H. The Effect of Incremental Innovation and Switching-Over to Architectural Innovation on the Sustainable Performance of Firms: The Case of the NAND Flash Memory Industry. Sustainability 2019, 11, 7105. https://doi.org/10.3390/su11247105
Kim H, Park C, Lee H. The Effect of Incremental Innovation and Switching-Over to Architectural Innovation on the Sustainable Performance of Firms: The Case of the NAND Flash Memory Industry. Sustainability. 2019; 11(24):7105. https://doi.org/10.3390/su11247105
Chicago/Turabian StyleKim, Heiseung, Changhyun Park, and Heesang Lee. 2019. "The Effect of Incremental Innovation and Switching-Over to Architectural Innovation on the Sustainable Performance of Firms: The Case of the NAND Flash Memory Industry" Sustainability 11, no. 24: 7105. https://doi.org/10.3390/su11247105
APA StyleKim, H., Park, C., & Lee, H. (2019). The Effect of Incremental Innovation and Switching-Over to Architectural Innovation on the Sustainable Performance of Firms: The Case of the NAND Flash Memory Industry. Sustainability, 11(24), 7105. https://doi.org/10.3390/su11247105