Jia, H.; Liang, Y.; Li, T.; Tong, Y.; Zhu, S.; Wang, X.; Zeng, T.; Yang, Y.
Improved DRUS 4H-SiC MESFET with High Power Added Efficiency. Micromachines 2020, 11, 35.
https://doi.org/10.3390/mi11010035
AMA Style
Jia H, Liang Y, Li T, Tong Y, Zhu S, Wang X, Zeng T, Yang Y.
Improved DRUS 4H-SiC MESFET with High Power Added Efficiency. Micromachines. 2020; 11(1):35.
https://doi.org/10.3390/mi11010035
Chicago/Turabian Style
Jia, Hujun, Yuan Liang, Tao Li, Yibo Tong, Shunwei Zhu, Xingyu Wang, Tonghui Zeng, and Yintang Yang.
2020. "Improved DRUS 4H-SiC MESFET with High Power Added Efficiency" Micromachines 11, no. 1: 35.
https://doi.org/10.3390/mi11010035
APA Style
Jia, H., Liang, Y., Li, T., Tong, Y., Zhu, S., Wang, X., Zeng, T., & Yang, Y.
(2020). Improved DRUS 4H-SiC MESFET with High Power Added Efficiency. Micromachines, 11(1), 35.
https://doi.org/10.3390/mi11010035