Article Versions Notes

Lin YC, Chen SH, Lee PH, Lai KH, Huang TJ, Chang EY, Hsu H-T. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications. Micromachines. 2020; 11(2):222. https://doi.org/10.3390/mi11020222

Lin, Y. C., S. H. Chen, P. H. Lee, K. H. Lai, T. J. Huang, Edward Y. Chang, and Heng-Tung Hsu. 2020. "Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications" Micromachines 11, no. 2: 222. https://doi.org/10.3390/mi11020222

Lin, Y. C., Chen, S. H., Lee, P. H., Lai, K. H., Huang, T. J., Chang, E. Y., & Hsu, H. -T. (2020). Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications. Micromachines, 11(2), 222. https://doi.org/10.3390/mi11020222