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Journal: Micromachines, 2020
Volume: 11
Number: 222
222
Article: Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications
Authors: by Y. C. Lin, S. H. Chen, P. H. Lee, K. H. Lai, T. J. Huang, Edward Y. Chang and Heng-Tung Hsu
Link: https://www.mdpi.com/2072-666X/11/2/222

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