Niu, D.; Wang, Q.; Li, W.; Chen, C.; Xu, J.; Jiang, L.; Feng, C.; Xiao, H.; Wang, Q.; Xu, X.;
et al. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. Micromachines 2021, 12, 131.
https://doi.org/10.3390/mi12020131
AMA Style
Niu D, Wang Q, Li W, Chen C, Xu J, Jiang L, Feng C, Xiao H, Wang Q, Xu X,
et al. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. Micromachines. 2021; 12(2):131.
https://doi.org/10.3390/mi12020131
Chicago/Turabian Style
Niu, Di, Quan Wang, Wei Li, Changxi Chen, Jiankai Xu, Lijuan Jiang, Chun Feng, Hongling Xiao, Qian Wang, Xiangang Xu,
and et al. 2021. "The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT" Micromachines 12, no. 2: 131.
https://doi.org/10.3390/mi12020131
APA Style
Niu, D., Wang, Q., Li, W., Chen, C., Xu, J., Jiang, L., Feng, C., Xiao, H., Wang, Q., Xu, X., & Wang, X.
(2021). The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. Micromachines, 12(2), 131.
https://doi.org/10.3390/mi12020131
