Zagni, N.; Chini, A.; Puglisi, F.M.; Pavan, P.; Verzellesi, G.
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs. Micromachines 2021, 12, 709.
https://doi.org/10.3390/mi12060709
AMA Style
Zagni N, Chini A, Puglisi FM, Pavan P, Verzellesi G.
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs. Micromachines. 2021; 12(6):709.
https://doi.org/10.3390/mi12060709
Chicago/Turabian Style
Zagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, and Giovanni Verzellesi.
2021. "On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs" Micromachines 12, no. 6: 709.
https://doi.org/10.3390/mi12060709
APA Style
Zagni, N., Chini, A., Puglisi, F. M., Pavan, P., & Verzellesi, G.
(2021). On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs. Micromachines, 12(6), 709.
https://doi.org/10.3390/mi12060709