Article Versions Notes

Choi J-H, Kang W-S, Kim D, Kim J-H, Lee J-H, Kim K-Y, Min B-G, Kang DM, Kim H-S. Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study. Micromachines. 2023; 14(6):1101. https://doi.org/10.3390/mi14061101

Choi, Jun-Hyeok, Woo-Seok Kang, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Kyeong-Yong Kim, Byoung-Gue Min, Dong Min Kang, and Hyun-Seok Kim. 2023. "Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study" Micromachines 14, no. 6: 1101. https://doi.org/10.3390/mi14061101

Choi, J. -H., Kang, W. -S., Kim, D., Kim, J. -H., Lee, J. -H., Kim, K. -Y., Min, B. -G., Kang, D. M., & Kim, H. -S. (2023). Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study. Micromachines, 14(6), 1101. https://doi.org/10.3390/mi14061101