Kim, M.; Ha, J.; Kwon, I.; Han, J.-H.; Cho, S.; Cho, I.H.
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications. Micromachines 2018, 9, 581.
https://doi.org/10.3390/mi9110581
AMA Style
Kim M, Ha J, Kwon I, Han J-H, Cho S, Cho IH.
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications. Micromachines. 2018; 9(11):581.
https://doi.org/10.3390/mi9110581
Chicago/Turabian Style
Kim, Myeongsun, Jongmin Ha, Ikhyeon Kwon, Jae-Hee Han, Seongjae Cho, and Il Hwan Cho.
2018. "A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications" Micromachines 9, no. 11: 581.
https://doi.org/10.3390/mi9110581
APA Style
Kim, M., Ha, J., Kwon, I., Han, J. -H., Cho, S., & Cho, I. H.
(2018). A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications. Micromachines, 9(11), 581.
https://doi.org/10.3390/mi9110581