Article Versions Notes

Shih C-F, Hsieh Y-L, Chang L-B, Jeng M-J, Ding Z-X, Huang S-A. Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application. Crystals. 2020; 10(4):292. https://doi.org/10.3390/cryst10040292

Shih, Chien-Fu, Yu-Li Hsieh, Liann-Be Chang, Ming-Jer Jeng, Zi-Xin Ding, and Shao-An Huang. 2020. "Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application" Crystals 10, no. 4: 292. https://doi.org/10.3390/cryst10040292

Shih, C. -F., Hsieh, Y. -L., Chang, L. -B., Jeng, M. -J., Ding, Z. -X., & Huang, S. -A. (2020). Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application. Crystals, 10(4), 292. https://doi.org/10.3390/cryst10040292