Order Article Reprints

Ouaddah H, Becker M, Riberi-Béridot T, Tsoutsouva M, Stamelou V, Regula G, Reinhart G, Périchaud I, Guittonneau F, Barrallier L, et al. X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation. Crystals. 2020; 10(7):555. https://doi.org/10.3390/cryst10070555

Ouaddah, Hadjer, Maike Becker, Thècle Riberi-Béridot, Maria Tsoutsouva, Vasiliki Stamelou, Gabrielle Regula, Guillaume Reinhart, Isabelle Périchaud, Fabrice Guittonneau, Laurent Barrallier, and et al. 2020. "X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation" Crystals 10, no. 7: 555. https://doi.org/10.3390/cryst10070555

Ouaddah, H., Becker, M., Riberi-Béridot, T., Tsoutsouva, M., Stamelou, V., Regula, G., Reinhart, G., Périchaud, I., Guittonneau, F., Barrallier, L., Valade, J. -P., Rack, A., Boller, E., Baruchel, J., & Mangelinck-Noël, N. (2020). X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation. Crystals, 10(7), 555. https://doi.org/10.3390/cryst10070555