Islam, N.; Mohamed, M.F.P.; Khan, M.F.A.J.; Falina, S.; Kawarada, H.; Syamsul, M.
Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review. Crystals 2022, 12, 1581.
https://doi.org/10.3390/cryst12111581
AMA Style
Islam N, Mohamed MFP, Khan MFAJ, Falina S, Kawarada H, Syamsul M.
Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review. Crystals. 2022; 12(11):1581.
https://doi.org/10.3390/cryst12111581
Chicago/Turabian Style
Islam, Naeemul, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, and Mohd Syamsul.
2022. "Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review" Crystals 12, no. 11: 1581.
https://doi.org/10.3390/cryst12111581
APA Style
Islam, N., Mohamed, M. F. P., Khan, M. F. A. J., Falina, S., Kawarada, H., & Syamsul, M.
(2022). Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review. Crystals, 12(11), 1581.
https://doi.org/10.3390/cryst12111581