Article Versions Notes

Yang W, Yang Z, Wang M, Yu H, Zhang Y, Wang W, Zhou X, Pan J. Selective Growth of Energy-Band-Controllable In_1−xGa_xAs_yP_1−y Submicron Wires in V-Shaped Trench on Si. Crystals. 2022; 12(4):476. https://doi.org/10.3390/cryst12040476

Yang, Wenyu, Zhengxia Yang, Mengqi Wang, Hongyan Yu, Yejin Zhang, Wei Wang, Xuliang Zhou, and Jiaoqing Pan. 2022. "Selective Growth of Energy-Band-Controllable In_1−xGa_xAs_yP_1−y Submicron Wires in V-Shaped Trench on Si" Crystals 12, no. 4: 476. https://doi.org/10.3390/cryst12040476

Yang, W., Yang, Z., Wang, M., Yu, H., Zhang, Y., Wang, W., Zhou, X., & Pan, J. (2022). Selective Growth of Energy-Band-Controllable In_1−xGa_xAs_yP_1−y Submicron Wires in V-Shaped Trench on Si. Crystals, 12(4), 476. https://doi.org/10.3390/cryst12040476