Order Article Reprints

Ewing J, Lynsky C, Zhang J, Shapturenka P, Wong M, Smith J, Iza M, Speck JS, DenBaars SP. Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon. Crystals. 2022; 12(9):1216. https://doi.org/10.3390/cryst12091216

Ewing, Jacob, Cheyenne Lynsky, Jiaao Zhang, Pavel Shapturenka, Matthew Wong, Jordan Smith, Michael Iza, James S. Speck, and Stephen P. DenBaars. 2022. "Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon" Crystals 12, no. 9: 1216. https://doi.org/10.3390/cryst12091216

Ewing, J., Lynsky, C., Zhang, J., Shapturenka, P., Wong, M., Smith, J., Iza, M., Speck, J. S., & DenBaars, S. P. (2022). Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon. Crystals, 12(9), 1216. https://doi.org/10.3390/cryst12091216