Order Article Reprints

Fang M, Tian K, Chu C, Zhang Y, Zhang Z-H, Bi W. Manipulation of Si Doping Concentration for Modification of the Electric Field and Carrier Injection for AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes. Crystals. 2018; 8(6):258. https://doi.org/10.3390/cryst8060258

Fang, Mengqian, Kangkai Tian, Chunshuang Chu, Yonghui Zhang, Zi-Hui Zhang, and Wengang Bi. 2018. "Manipulation of Si Doping Concentration for Modification of the Electric Field and Carrier Injection for AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes" Crystals 8, no. 6: 258. https://doi.org/10.3390/cryst8060258

Fang, M., Tian, K., Chu, C., Zhang, Y., Zhang, Z. -H., & Bi, W. (2018). Manipulation of Si Doping Concentration for Modification of the Electric Field and Carrier Injection for AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes. Crystals, 8(6), 258. https://doi.org/10.3390/cryst8060258