Article Versions Notes

Ahmed Ali AM, Ahmed NM, Kabir NA, Ali MKM, Akhdar H, Aldaghri OA, Ibnaouf KH, Sulieman A. Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters. Applied Sciences. 2021; 11(23):11258. https://doi.org/10.3390/app112311258

Ahmed Ali, Amal Mohamed, Naser M. Ahmed, Norlaili A. Kabir, Mohammed Khalil Mohammed Ali, Hanan Akhdar, Osamah A. Aldaghri, Khalid Hassan Ibnaouf, and Abdelmoneim Sulieman. 2021. "Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters" Applied Sciences 11, no. 23: 11258. https://doi.org/10.3390/app112311258

Ahmed Ali, A. M., Ahmed, N. M., Kabir, N. A., Ali, M. K. M., Akhdar, H., Aldaghri, O. A., Ibnaouf, K. H., & Sulieman, A. (2021). Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters. Applied Sciences, 11(23), 11258. https://doi.org/10.3390/app112311258