Next Article in Journal
3D FEM Analysis of the Subsoil-Building Interaction
Next Article in Special Issue
Fabrication of a Conductive Pattern on a Photo-Polymerized Structure Using Direct Laser Sintering
Previous Article in Journal
Vacant House Characteristics by Use Area and Their Application to Sustainable Community
Previous Article in Special Issue
Elasto-Inertial Particle Focusing in Microchannel with T-Shaped Cross-Section
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Applied Sciences
Volume 12
Issue 21
10.3390/app122110697
Review Report
applsci-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
Review
Peer-Review Record

A Review of Cell Operation Algorithm for 3D NAND Flash Memory

Appl. Sci. 2022, 12(21), 10697; https://doi.org/10.3390/app122110697
by Jong Kyung Park and Sarah Eunkyung Kim *
Reviewer 1: Anonymous
Reviewer 2: Anonymous
Appl. Sci. 2022, 12(21), 10697; https://doi.org/10.3390/app122110697
Submission received: 29 September 2022 / Revised: 16 October 2022 / Accepted: 19 October 2022 / Published: 22 October 2022
(This article belongs to the Special Issue Innovative Design and Manufacturing Processes for Engineering Materials)

Round 1

Reviewer 1 Report

This paper presents an excellent review for Cell Operation Algorithm for 3D NAND Flash. The authors have done a comprehensive literature review the device operation algorithm and techniques to improve the cell characteristics and reliability in terms of optimization of individual program, read,  erase operation and system level performance.

The reviewer generally suggest the acceptance of this paper. The review of 3D flash memory is necessary and it is a timing topic in this research field.

Only one minor issue is related to the adequate references to related and previous work. The reviewer noticed that there have been several state-of-art system-level optimizations to address thermal, temperature, and process-variation issues in 3D charge-trap flash memory. The authors should cite and include these previous studies in the review. This can further improve the quality of the manuscript.

[1] Yi Wang, Jiangfan Huang, Jing Chen, Rui Mao: PVSensing: A Process-Variation-Aware Space Allocation Strategy for 3D NAND Flash Memory. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41(5): 1302-1315 (2022)

[2] Yi Wang, Jiali Tan, Rui Mao, Tao Li: Temperature-Aware Persistent Data Management for LSM-Tree on 3-D NAND Flash Memory. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39(12): 4611-4622 (2020)

[3] Yu-Ming Chang, Yuan-Hao Chang, Tei-Wei Kuo, Yung-Chun Li, Hsiang-Pang Li: Disturbance Relaxation for 3D Flash Memory. IEEE Trans. Computers 65(5): 1467-1483 (2016)

Author Response

Please see the attachment.

Author Response File: Author Response.doc

Reviewer 2 Report

Cell Operation Algorithm for 3D NAND Flash Memory is reviewed in this paper. Minor revision is needed as below. 

On page 2

Line 66: “escapes” seems not appropriate. It should be replaced with e.g. “flows”.

Line 72: “worse” seems not appropriate. It should be replaced with e.g. “reduces”.

Lin 78-79: More explanations are needed for this sentence because the reviewer does not understand what is discussed.

 

On Page 8

Line 315:  More explanations are needed for this sentence because the reviewer does not understand what Chen has done.

 

On Page 13

Line 480:  More explanations are needed for this sentence because the reviewer does not understand what Kim has done.

 

On Page 16

Line 606:  More explanations are needed for this sentence because the reviewer does not understand what GAA effect means.

 

Author Response

Please see the attachment.

Author Response File: Author Response.doc

Back to TopTop