Improved MSRN-Based Attention Block for Mask Alignment Mark Detection in Photolithography
Abstract
:1. Introduction
- A Multi-Scale Residual Attention Block was constructed by applying an Attention Mechanism based on the Multi-Scale Residual Network. We proposed a High-Resolution (HR) model in which the resolution of Low-Resolution (LR) images is improved and the extracted features are improved by reconstructing the model structure of a multiscale network.
- We proved that object detection is improved by increasing the image resolution of the proposed model. When detecting an object through a vision machine, the detection performance is improved by improving the resolution.
- The data collected through the equipment is pre-processed and learned, and it is reliable in practical application through the analysis of the results, images, and detection obtained by conducting various experiments.
2. Related Work
2.1. Semiconductor Mask Aligner
2.2. Deep Learning for Super-Resolution
2.3. MSRB
2.4. Attention Mechanism
3. Improved MSRN-Based Attention Block
3.1. System Architecture
3.2. MSRAB
4. Experiment and Results
4.1. Experimental Environments
4.2. Data Acquisition
4.3. Evaluation Metrics
4.4. Results
4.4.1. Training Model
4.4.2. Alignment Mark Detection
4.4.3. Super Resolution
4.4.4. Alignment Mark Detection for Our Model
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Hardware Environment | Software Environment |
---|---|
CPU: Intel Core i7-8700k, 3.7 Ghz, | Window PyTorch framework |
Six-core twelve threads 16 GB GPU: GeForce GTX 1080Ti | Python 3.6 Darknet C++ Interface |
Contents | Specifications |
---|---|
Overview | UV broadband (250–450 nm), I-line (365 nm), and G-line (436 nm) wavelength available |
Exposure methods | Flood, proximity, soft and hard contacts, low vacuum andvacuum contacts |
Mask size | |
Wafer size for top-side alignment | up to 6” in diameter (small samples, 2”, 3”, 4”, and 6”) |
Wafer size for bottom-side alignment | 3″ and 4″ chucksore |
Maximum wafer thickness | 3 mm |
Other | The machine is exclusively intended for use as an alignment and/or exposure device for substrates used in semiconductor and microsystems technology |
Model | Image Size | mAP@50 | Precision | Recall | F1-Score | IOU |
---|---|---|---|---|---|---|
YOLOv4 | 99.93 | 0.99 | 1 | 1 | 92.39 | |
98.89 | 0.99 | 1 | 0.99 | 91.2 | ||
99.82 | 0.99 | 1 | 0.99 | 89.88 | ||
46.13 | 0.89 | 0.21 | 0.34 | 73.89 | ||
YOLOv4-csp-swish | 99.90 | 0.75 | 0.94 | 0.83 | 69.78 | |
99.89 | 0.77 | 0.95 | 0.85 | 71.22 | ||
92.86 | 0.76 | 0.96 | 0.85 | 69.62 | ||
92.89 | 0.89 | 0.34 | 0.49 | 74.34 | ||
YOLOv4-tiny | 99.91 | 0.95 | 1 | 0.96 | 84.13 | |
99.84 | 0.93 | 1 | 0.97 | 84.01 | ||
99.72 | 0.93 | 1 | 0.97 | 84.2 | ||
80.48 | 0.87 | 0.33 | 0.48 | 66.25 |
Method | Scale | PSNR | SSIM |
---|---|---|---|
Bicubic | 2 | 30.56 | 0.871 |
A+ [27] | 32.29 | 0.895 | |
SRCNN [29] | 32.45 | 0.903 | |
ESPCN [33] | 32.91 | 0.911 | |
MSRN [32] | 33.26 | 0.914 | |
Ours | 33.52 | 0.917 | |
Bicubic | 3 | 27.73 | 0.783 |
A+ [27] | 28.97 | 0.807 | |
SRCNN [29] | 29.28 | 0.820 | |
ESPCN [33] | 29.51 | 0.825 | |
MSRN [32] | 29.64 | 0.831 | |
Ours | 29.87 | 0.839 |
Model | Image Size | mAP@50 | Precision | Recall | F1-Score | IOU |
---|---|---|---|---|---|---|
YOLOv4 | 46.13 | 0.89 | 0.21 | 0.34 | 73.89 | |
(SR) | 46.67 | 0.93 | 0.30 | 0.46 | 78.29 | |
YOLOv4-csp-swish | 92.89 | 0.89 | 0.34 | 0.49 | 74.34 | |
(SR) | 93.58 | 0.89 | 0.36 | 0.51 | 74.46 | |
YOLOv4-tiny | 80.48 | 0.87 | 0.33 | 0.48 | 66.25 | |
(SR) | 80.85 | 0.87 | 0.38 | 0.53 | 67.45 |
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Park, J.; Jeong, J. Improved MSRN-Based Attention Block for Mask Alignment Mark Detection in Photolithography. Appl. Sci. 2022, 12, 2721. https://doi.org/10.3390/app12052721
Park J, Jeong J. Improved MSRN-Based Attention Block for Mask Alignment Mark Detection in Photolithography. Applied Sciences. 2022; 12(5):2721. https://doi.org/10.3390/app12052721
Chicago/Turabian StylePark, Juyong, and Jongpil Jeong. 2022. "Improved MSRN-Based Attention Block for Mask Alignment Mark Detection in Photolithography" Applied Sciences 12, no. 5: 2721. https://doi.org/10.3390/app12052721
APA StylePark, J., & Jeong, J. (2022). Improved MSRN-Based Attention Block for Mask Alignment Mark Detection in Photolithography. Applied Sciences, 12(5), 2721. https://doi.org/10.3390/app12052721