Wang, F.; Yang, X.; Zhao, Y.; Wu, J.; Guo, Z.; He, Z.; Fan, Z.; Yang, F.
Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Appl. Sci. 2022, 12, 3261.
https://doi.org/10.3390/app12073261
AMA Style
Wang F, Yang X, Zhao Y, Wu J, Guo Z, He Z, Fan Z, Yang F.
Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Applied Sciences. 2022; 12(7):3261.
https://doi.org/10.3390/app12073261
Chicago/Turabian Style
Wang, Fengxuan, Xiang Yang, Yongqiang Zhao, Jingmin Wu, Zhiyu Guo, Zhi He, Zhongchao Fan, and Fuhua Yang.
2022. "Low-Temperature Direct Bonding of SiC to Si via Plasma Activation" Applied Sciences 12, no. 7: 3261.
https://doi.org/10.3390/app12073261
APA Style
Wang, F., Yang, X., Zhao, Y., Wu, J., Guo, Z., He, Z., Fan, Z., & Yang, F.
(2022). Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Applied Sciences, 12(7), 3261.
https://doi.org/10.3390/app12073261