Elash, C.J.; Li, Z.; Jin, C.; Chen, L.; Xing, J.; Yang, Z.; Shi, S.
Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node. Appl. Sci. 2022, 12, 4229.
https://doi.org/10.3390/app12094229
AMA Style
Elash CJ, Li Z, Jin C, Chen L, Xing J, Yang Z, Shi S.
Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node. Applied Sciences. 2022; 12(9):4229.
https://doi.org/10.3390/app12094229
Chicago/Turabian Style
Elash, Christopher J., Zongru Li, Chen Jin, Li Chen, Jiesi Xing, Zhiwu Yang, and Shuting Shi.
2022. "Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node" Applied Sciences 12, no. 9: 4229.
https://doi.org/10.3390/app12094229
APA Style
Elash, C. J., Li, Z., Jin, C., Chen, L., Xing, J., Yang, Z., & Shi, S.
(2022). Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node. Applied Sciences, 12(9), 4229.
https://doi.org/10.3390/app12094229