The Impact of Plasma Intensity on the Unused Rate in Semiconductor Manufacturing: Comparative Analysis Across Intensity Ranges from 30 to 3000

Min, Dae Kee; Woo, Jiyun; Kim, Jinwook; Lee, Bong-Jae; Jeon, Eui-chan; Lee, Joohee

doi:10.3390/app15031441

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The Impact of Plasma Intensity on the Unused Rate in Semiconductor Manufacturing: Comparative Analysis Across Intensity Ranges from 30 to 3000

by

Dae Kee Min

^1,†,

Jiyun Woo

^2,†

,

Jinwook Kim

³,

Bong-Jae Lee

⁴

,

Eui-chan Jeon

²

and

Joohee Lee

^5,*

¹

Department of Statistics, Duksung Women’s University, Seoul 01369, Republic of Korea

²

Department of Climate and Environment, Sejong University, Seoul 05006, Republic of Korea

³

Korea Quality Assurance (KQA), Anyang-si 14034, Republic of Korea

⁴

Korea Testing & Research Institute (KTR), Gwacheon-si 13810, Republic of Korea

⁵

Department of Climate and Energy, Sejong University, Seoul 05006, Republic of Korea

^*

Author to whom correspondence should be addressed.

^†

These authors contributed equally to this work.

Appl. Sci. 2025, 15(3), 1441; https://doi.org/10.3390/app15031441

Submission received: 8 November 2024 / Revised: 25 January 2025 / Accepted: 29 January 2025 / Published: 30 January 2025

(This article belongs to the Special Issue Air Pollution and Its Impact on the Atmospheric Environment)

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Abstract

This study examines the impact of plasma intensity on the process unused rate, expressed as 1-Ui, within semiconductor manufacturing. Since the influence of plasma level on 1-Ui is inconsistent without considering gas, the experimental data were analyzed after grouping plasma levels by intensity. Plasma intensity is classified into three categories: low (<100), medium (500–700), and high (>1000). The dataset includes seven columns and 8324 entries representing seven gases—NF3, SF6, CH2F2, CHF3, C4F6, C4F8, and CF4. To analyze the relationship between plasma intensity and 1-Ui, we conducted a series of ANOVA tests followed by post hoc analyses to identify statistically significant differences in 1-Ui across the defined plasma intensity levels.

Keywords: plasma intensity; semiconductor manufacturing; process unused rate; 1-Ui; ANOVA; non-linear regression

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MDPI and ACS Style

Min, D.K.; Woo, J.; Kim, J.; Lee, B.-J.; Jeon, E.-c.; Lee, J. The Impact of Plasma Intensity on the Unused Rate in Semiconductor Manufacturing: Comparative Analysis Across Intensity Ranges from 30 to 3000. Appl. Sci. 2025, 15, 1441. https://doi.org/10.3390/app15031441

AMA Style

Min DK, Woo J, Kim J, Lee B-J, Jeon E-c, Lee J. The Impact of Plasma Intensity on the Unused Rate in Semiconductor Manufacturing: Comparative Analysis Across Intensity Ranges from 30 to 3000. Applied Sciences. 2025; 15(3):1441. https://doi.org/10.3390/app15031441

Chicago/Turabian Style

Min, Dae Kee, Jiyun Woo, Jinwook Kim, Bong-Jae Lee, Eui-chan Jeon, and Joohee Lee. 2025. "The Impact of Plasma Intensity on the Unused Rate in Semiconductor Manufacturing: Comparative Analysis Across Intensity Ranges from 30 to 3000" Applied Sciences 15, no. 3: 1441. https://doi.org/10.3390/app15031441

APA Style

Min, D. K., Woo, J., Kim, J., Lee, B.-J., Jeon, E.-c., & Lee, J. (2025). The Impact of Plasma Intensity on the Unused Rate in Semiconductor Manufacturing: Comparative Analysis Across Intensity Ranges from 30 to 3000. Applied Sciences, 15(3), 1441. https://doi.org/10.3390/app15031441

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The Impact of Plasma Intensity on the Unused Rate in Semiconductor Manufacturing: Comparative Analysis Across Intensity Ranges from 30 to 3000

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