Article Versions Notes

Zhang X-Y, Hsu C-H, Cho Y-S, Lien S-Y, Zhu W-Z, Chen S-Y, Huang W, Xie L-G, Chen L-D, Zou X-Y, et al. Simulation and Fabrication of HfO₂ Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD. Applied Sciences. 2017; 7(12):1244. https://doi.org/10.3390/app7121244

Zhang, Xiao-Ying, Chia-Hsun Hsu, Yun-Shao Cho, Shui-Yang Lien, Wen-Zhang Zhu, Song-Yan Chen, Wei Huang, Lin-Gui Xie, Lian-Dong Chen, Xu-Yang Zou, and et al. 2017. "Simulation and Fabrication of HfO₂ Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD" Applied Sciences 7, no. 12: 1244. https://doi.org/10.3390/app7121244

Zhang, X. -Y., Hsu, C. -H., Cho, Y. -S., Lien, S. -Y., Zhu, W. -Z., Chen, S. -Y., Huang, W., Xie, L. -G., Chen, L. -D., Zou, X. -Y., & Huang, S. -X. (2017). Simulation and Fabrication of HfO₂ Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD. Applied Sciences, 7(12), 1244. https://doi.org/10.3390/app7121244