Karbasian, G.; McConnell, M.S.; George, H.; Schneider, L.C.; Filmer, M.J.; Orlov, A.O.; Nazarov, A.N.; Snider, G.L.
Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition. Appl. Sci. 2017, 7, 246.
https://doi.org/10.3390/app7030246
AMA Style
Karbasian G, McConnell MS, George H, Schneider LC, Filmer MJ, Orlov AO, Nazarov AN, Snider GL.
Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition. Applied Sciences. 2017; 7(3):246.
https://doi.org/10.3390/app7030246
Chicago/Turabian Style
Karbasian, Golnaz, Michael S. McConnell, Hubert George, Louisa C. Schneider, Matthew J. Filmer, Alexei O. Orlov, Alexei N. Nazarov, and Gregory L. Snider.
2017. "Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition" Applied Sciences 7, no. 3: 246.
https://doi.org/10.3390/app7030246
APA Style
Karbasian, G., McConnell, M. S., George, H., Schneider, L. C., Filmer, M. J., Orlov, A. O., Nazarov, A. N., & Snider, G. L.
(2017). Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition. Applied Sciences, 7(3), 246.
https://doi.org/10.3390/app7030246