Article Versions Notes

Chen S, Li Y, Lin Y, He P, Long T, Deng C, Chen Z, Chen G, Tao H, Lan L, et al. Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance. Coatings. 2020; 10(4):425. https://doi.org/10.3390/coatings10040425

Chen, Siting, Yuzhi Li, Yilong Lin, Penghui He, Teng Long, Caihao Deng, Zhuo Chen, Geshuang Chen, Hong Tao, Linfeng Lan, and et al. 2020. "Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance" Coatings 10, no. 4: 425. https://doi.org/10.3390/coatings10040425

Chen, S., Li, Y., Lin, Y., He, P., Long, T., Deng, C., Chen, Z., Chen, G., Tao, H., Lan, L., & Peng, J. (2020). Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance. Coatings, 10(4), 425. https://doi.org/10.3390/coatings10040425