Article Versions Notes

Boichot R, Chen D, Mercier F, Baillet F, Giusti G, Coughlan T, Chubarov M, Pons M. Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach. Coatings. 2017; 7(9):136. https://doi.org/10.3390/coatings7090136

Boichot, Raphaël, Danying Chen, Frédéric Mercier, Francis Baillet, Gaël Giusti, Thomas Coughlan, Mikhail Chubarov, and Michel Pons. 2017. "Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach" Coatings 7, no. 9: 136. https://doi.org/10.3390/coatings7090136

Boichot, R., Chen, D., Mercier, F., Baillet, F., Giusti, G., Coughlan, T., Chubarov, M., & Pons, M. (2017). Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach. Coatings, 7(9), 136. https://doi.org/10.3390/coatings7090136