Article Versions Notes

Li M, Cai X, Zeng C, Li X, Ni T, Wang J, Li D, Zhao F, Han Z. The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology. Electronics. 2022; 11(4):546. https://doi.org/10.3390/electronics11040546

Li, Mingzhu, Xiaowu Cai, Chuanbin Zeng, Xiaojing Li, Tao Ni, Juanjuan Wang, Duoli Li, Fazhan Zhao, and Zhengsheng Han. 2022. "The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology" Electronics 11, no. 4: 546. https://doi.org/10.3390/electronics11040546

Li, M., Cai, X., Zeng, C., Li, X., Ni, T., Wang, J., Li, D., Zhao, F., & Han, Z. (2022). The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology. Electronics, 11(4), 546. https://doi.org/10.3390/electronics11040546