Fu, W.; Ma, T.; Lei, Z.; Peng, C.; Zhang, H.; Zhang, Z.; Xiao, T.; Song, H.; Wang, Y.; Wang, J.;
et al. Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes. Electronics 2024, 13, 2215.
https://doi.org/10.3390/electronics13112215
AMA Style
Fu W, Ma T, Lei Z, Peng C, Zhang H, Zhang Z, Xiao T, Song H, Wang Y, Wang J,
et al. Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes. Electronics. 2024; 13(11):2215.
https://doi.org/10.3390/electronics13112215
Chicago/Turabian Style
Fu, Weili, Teng Ma, Zhifeng Lei, Chao Peng, Hong Zhang, Zhangang Zhang, Tao Xiao, Hongjia Song, Yuangang Wang, Jinbin Wang,
and et al. 2024. "Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes" Electronics 13, no. 11: 2215.
https://doi.org/10.3390/electronics13112215
APA Style
Fu, W., Ma, T., Lei, Z., Peng, C., Zhang, H., Zhang, Z., Xiao, T., Song, H., Wang, Y., Wang, J., Fu, Z., & Zhong, X.
(2024). Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes. Electronics, 13(11), 2215.
https://doi.org/10.3390/electronics13112215
