Design and Implementation of 3 kW All-SiC Current Source Inverter

In this paper, the optimal design and implementation of a silicon-carbide (SiC) power semiconductor-based current source inverter (CSI) with a power rating of 3 kW focusing on high power density are discussed in detail. The proposed methodology integrates analytical and numerical techniques to optimize the design of passive components, including filter capacitors and the DC-link inductor, and provides a comprehensive analysis of power semiconductor losses. The losses in the DC-link inductor as well as in the output capacitor are strongly dependent on the modulation strategy. Semi-analytical loss models are therefore derived for the most advanced modulation strategy, which are subsequently used to increase volumetric power density. The theoretical findings are experimentally validated using an ultra-compact, high-efficiency 3 kW three-phase CSI prototype operating at up to 100 kHz switching frequency. The experimental results confirm the efficiency of the proposed design and demonstrate its potential for high-power, compact drive applications.