Advances in GaN-Based Electronic Materials and Devices

Dear Colleagues,

Thick epitaxial GaN power switching devices are known to contain a high density of crystal defects, especially threading dislocations in the epitaxial layer. The impact of these defects on device performance, manufacturing yield, and long-term field-reliability, especially when operating under extremely stressful high voltage environments, is a topic of ongoing research.

The major goals of this Special Issue are to publish research results from the community concerning the (1) defect density in thick n-doped GaN epitaxial layers grown on GaN substrates and to compare the defect structure of n-GaN epi grown either on SiC or Si(111). Manuscripts on epitaxial layer design to accomplish a high breakdown voltage and to be 7-10 microns thick are encouraged for submission. (2) The second goal of this Special Issue is to report results on the three-dimensional spatial defect distributions in thick epitaxy, using combined characterization tools such as cathodoluminescence and X-ray topography. (3) The third goal is to publish results concerning the critical breakdown field measurements as well as how to measure the critical breakdown field in the grown epitaxial layers and to correlate the critical breakdown field with spatial defect distribution. Based on the characterization of thick GaN epi, predictions of performance degradation and reliability can be carried out via simulated models.

This Special Issue encourages manuscripts on defects in thick GaN epi and their impact on the power electronic switch, as well as the latest results on unique substrates for GaN device quality epitaxial layer growth. Finally, this Special Issue encourages manuscripts to be submitted addressing all reliability issues, especially those related to failure mechanisms. Innovative research results of special GaN-based devices and circuits are also encouraged to be submitted to this Special Issue for publication.

I look forward to receiving your contributions.

Prof. Dr. Aristotelis Christou
Guest Editor

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

• GaN
• power switching devices
• epitaxial growth
• reliability
• semiconductor materials
• substrate engineering
• defect engineering