Novel Information Storage Micro/Nano Materials and Micro/Nano Devices
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".
Deadline for manuscript submissions: 31 December 2024 | Viewed by 144
Special Issue Editor
Special Issue Information
Dear Colleagues,
With the continuous innovation and development of new generation information technologies such as artificial intelligence and brain-like computing, the development of new non-volatile semiconductor memory with integrated storage and computing functions has become one of the most important research directions of microelectronic devices. In this Special Issue, we will cover a wide range of topics involving information storage materials and related electronic devices to develop new materials, processes, and devices that break through traditional computing-in memory power consumption and performance bottlenecks, including their manufacture, properties, characterizations, and modeling, device optimization and performance. We welcome novel research on all aspects of information storage materials, including theory, experiment, synthesis, and related electronic devices optimization, etc.
Dr. Yue Peng
Guest Editor
Manuscript Submission Information
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Keywords
- novel principle devices for realizing storage
- novel ferroelectric storage materials and improvement of their non-ideal properties
- fabrication of resistance random access memory (RRAM) and performance improvement
- phase change storage materials and their devices
- simulated and design of novel types of information storage materials
- neuromorphic devices and integrated technology
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