Fedorov, F.S.; Podgainov, D.; Varezhnikov, A.; Lashkov, A.; Gorshenkov, M.; Burmistrov, I.; Sommer, M.; Sysoev, V.
The Potentiodynamic Bottom-up Growth of the Tin Oxide Nanostructured Layer for Gas-Analytical Multisensor Array Chips. Sensors 2017, 17, 1908.
https://doi.org/10.3390/s17081908
AMA Style
Fedorov FS, Podgainov D, Varezhnikov A, Lashkov A, Gorshenkov M, Burmistrov I, Sommer M, Sysoev V.
The Potentiodynamic Bottom-up Growth of the Tin Oxide Nanostructured Layer for Gas-Analytical Multisensor Array Chips. Sensors. 2017; 17(8):1908.
https://doi.org/10.3390/s17081908
Chicago/Turabian Style
Fedorov, Fedor S., Dmitry Podgainov, Alexey Varezhnikov, Andrey Lashkov, Michail Gorshenkov, Igor Burmistrov, Martin Sommer, and Victor Sysoev.
2017. "The Potentiodynamic Bottom-up Growth of the Tin Oxide Nanostructured Layer for Gas-Analytical Multisensor Array Chips" Sensors 17, no. 8: 1908.
https://doi.org/10.3390/s17081908
APA Style
Fedorov, F. S., Podgainov, D., Varezhnikov, A., Lashkov, A., Gorshenkov, M., Burmistrov, I., Sommer, M., & Sysoev, V.
(2017). The Potentiodynamic Bottom-up Growth of the Tin Oxide Nanostructured Layer for Gas-Analytical Multisensor Array Chips. Sensors, 17(8), 1908.
https://doi.org/10.3390/s17081908