Takayanagi, I.; Miyauchi, K.; Okura, S.; Mori, K.; Nakamura, J.; Sugawa, S.
A 120-ke− Full-Well Capacity 160-µV/e− Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor. Sensors 2019, 19, 5572.
https://doi.org/10.3390/s19245572
AMA Style
Takayanagi I, Miyauchi K, Okura S, Mori K, Nakamura J, Sugawa S.
A 120-ke− Full-Well Capacity 160-µV/e− Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor. Sensors. 2019; 19(24):5572.
https://doi.org/10.3390/s19245572
Chicago/Turabian Style
Takayanagi, Isao, Ken Miyauchi, Shunsuke Okura, Kazuya Mori, Junichi Nakamura, and Shigetoshi Sugawa.
2019. "A 120-ke− Full-Well Capacity 160-µV/e− Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor" Sensors 19, no. 24: 5572.
https://doi.org/10.3390/s19245572
APA Style
Takayanagi, I., Miyauchi, K., Okura, S., Mori, K., Nakamura, J., & Sugawa, S.
(2019). A 120-ke− Full-Well Capacity 160-µV/e− Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor. Sensors, 19(24), 5572.
https://doi.org/10.3390/s19245572