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Dolatpoor Lakeh M, Kammerer J-B, Aguénounon E, Issartel D, Schell J-B, Rink S, Cathelin A, Calmon F, Uhring W. An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique. Sensors. 2021; 21(12):4014. https://doi.org/10.3390/s21124014

Dolatpoor Lakeh, Mohammadreza, Jean-Baptiste Kammerer, Enagnon Aguénounon, Dylan Issartel, Jean-Baptiste Schell, Sven Rink, Andreia Cathelin, Francis Calmon, and Wilfried Uhring. 2021. "An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique" Sensors 21, no. 12: 4014. https://doi.org/10.3390/s21124014

Dolatpoor Lakeh, M., Kammerer, J. -B., Aguénounon, E., Issartel, D., Schell, J. -B., Rink, S., Cathelin, A., Calmon, F., & Uhring, W. (2021). An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique. Sensors, 21(12), 4014. https://doi.org/10.3390/s21124014