The Estimation Life Cycle of Lithium-Ion Battery Based on Deep Learning Network and Genetic Algorithm
Abstract
:1. Introduction
2. Related Works
2.1. MLP (Multilayer Perceptron)
2.2. RNN (Recurrent Neural Network)
2.3. LSTM (Long Short-Term Memory)
2.4. GRU (Gated Recurrent Unit)
Recurrent Neural Network Equation |
The output of RNN: σ( ) is activation function. is the hidden layer activations in time t. is the input vector. is the weight of input vector. is the weight of hidden layer activations. is the bias. |
Long Short Term Memory Equation |
Forgotten gate: σ( ) is activation function. is the current forgotten gate. is the current input vector. is the current weight of input vector. is the weight of the hidden vector. is the weight of hidden vector in time t − 1. is the bias. Input gate: it = σ(Wxi × Xt + Whi × ht − 1 + bi) it is the external input gate. Output gate: Ot = σ(Wxo × Xt + Who × ht − 1 + bo) Ot is the output gate. is the output. |
Gated Recurrent Unit Equation |
Update gate: Zt is the update gate. Reset gate: Rt is the reset gate. |
3. Our Proposed Battery Model and Prediction Method
3.1. Battery Characteristics
3.2. Lithium-Ion Battery Charge and Discharge
3.3. Lithium-Ion Battery Activation
3.4. Lithium-Ion Battery Charging and Discharging
3.5. Multilayer Perceptron
3.6. Recurrent Neural Network, Long Short Term Memory, and Gated Recurrent Unit
- In addition to the predicted output, a memory branch is added and updated over time. The current memory is represented by the “forget gate”, and “input gate” is used to determine whether to update the memory.
- Forget Gate: If the current sentence is a new topic or the opposite of the previous sentence, the previous sentence will be filtered out by this gate. Otherwise, it may continue to be retained in memory. This gate is usually a Sigmoid function.
- Input Gate: This determines whether the current input and the newly generated memory cell are added to the long term memory. This gate is also a Sigmoid function, which means that it needs to be added or not.
- Output Gate: This determines whether the current state is added to the output. This gate is also a Sigmoid function, indicating whether to add it or not.
- Finally, for whether the long-term memory is added to the output, the tanh function is usually used. The value of the output gate will fall between [−1, 1], and the −1 means removing the long-term memory.
3.7. Genetic Algorithm
4. Experiment Result
4.1. Manual Extraction Parameters
4.2. MLP Result
4.3. RNN Result
4.4. LSTM Result
4.5. GRU Result
4.6. GA Results
4.6.1. L Brand 18650
4.6.2. P Brand 18650
4.6.3. S Brand 18650
5. Discussion
6. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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L Brand | P Brand | S Brand | |
---|---|---|---|
Average voltage | 3.7 V | 3.7 V | 3.7 V |
Charging cut-off voltage | 4.2 V | 4.2 V | 4.2 V |
Discharge cut-off voltage | 3.0 V | 3.0 V | 3.0 V |
Nominal capacity | 2200 mAh | 2200 mAh | 2200 mAh |
Maximum discharge rate | 1.5 C | 1.5 C | 1.5 C |
Cycle life | ≥300 | ≥300 | ≥300 |
Charging working temperature | 10 °C~45 °C | 10 °C~45 °C | 10 °C~45 °C |
Discharge working temperature | −10 °C~60 °C | −10 °C~60 °C | ±10 °C~60 °C |
L Brand 18650 | Score | P Brand 18650 | Score | S Brand 18650 | Score |
---|---|---|---|---|---|
C1E100LB10 | 2.3962 | C1E100LB10 | 1.9665 | C1E100LB10 | 1.416 |
C2E100LB10 | 1.0355 | C2E100LB10 | 2.5641 | C2E100LB10 | 5.1457 |
C3E100LB10 | 1.9235 | C3E100LB10 | 2.1702 | C3E100LB10 | 1.4973 |
C4E100LB10 | 2.5563 | C4E100LB10 | 1.2151 | C4E100LB10 | 1.9197 |
C5E100LB10 | 1.8657 | C5E100LB10 | 3.4141 | C5E100LB10 | 2.2744 |
C6E100LB10 | 2.1928 | ||||
C7E100LB10 | 1.8609 |
L Brand 18650 | Score | P Brand 18650 | Score | S Brand 18650 | Score |
---|---|---|---|---|---|
C1E100LB10 | 22.7628 | C1E100LB10 | 26.1699 | C1E100LB10 | 10.2164 |
C2E100LB10 | 12.8867 | C2E100LB10 | 15.3611 | C2E100LB10 | 11.8313 |
C3E100LB10 | 19.2566 | C3E100LB10 | 7.8641 | C3E100LB10 | 16.3885 |
C4E100LB10 | 16.4656 | C4E100LB10 | 13.1751 | C4E100LB10 | 47.0949 |
C5E100LB10 | 14.4838 | C5E100LB10 | 27.3929 | C5E100LB10 | 23.4548 |
C6E100LB10 | 12.1015 | ||||
C7E100LB10 | 11.0649 |
L Brand 18650 | Score | P Brand 18650 | Score | S Brand 18650 | Score |
---|---|---|---|---|---|
C1E100LB10 | 35.2445 | C1E100LB10 | 5.3272 | C1E100LB10 | 5.2539 |
C2E100LB10 | 34.7757 | C2E100LB10 | 7.2181 | C2E100LB10 | 30.271 |
C3E100LB10 | 16.183 | C3E100LB10 | 9.3963 | C3E100LB10 | 8.6395 |
C4E100LB10 | 4.7719 | C4E100LB10 | 3.2441 | C4E100LB10 | 16.1969 |
C5E100LB10 | 7.4273 | C5E100LB10 | 7.3323 | C5E100LB10 | 11.1258 |
C6E100LB10 | 5.8578 | ||||
C7E100LB10 | 3.7878 |
L Brand 18650 | Score | P Brand 18650 | Score | S Brand 18650 | Score |
---|---|---|---|---|---|
C1E100LB10 | 11.7349 | C1E100LB10 | 13.9564 | C1E100LB10 | 7.9086 |
C2E100LB10 | 22.561 | C2E100LB10 | 10.8346 | C2E100LB10 | 14.9015 |
C3E100LB10 | 15.0054 | C3E100LB10 | 8.2631 | C3E100LB10 | 7.614 |
C4E100LB10 | 5.245 | C4E100LB10 | 5.8903 | C4E100LB10 | 21.8592 |
C5E100LB10 | 5.2089 | C5E100LB10 | 12.3002 | C5E100LB10 | 8.8804 |
C6E100LB10 | 7.3077 | ||||
C7E100LB10 | 5.1895 |
Parameter | Range | True Value |
---|---|---|
I | 0.01~110 | 72.6875 |
K | 1.4 × 10−13~1.4 × 10−19 | 1.3633 × 10−13 |
Vk | 0~4000 | 3674 |
Vc | 0~42,000 | 1292 |
Vo1 | 0~3000 | 2404 |
Vo2 | 0~35,000 | 10,603 |
Vo3 | 0~4000 | 2555 |
Vo4 | 0~70,000 | 30,444 |
τ1 | 0~140,000 | 5339 |
τ2 | 0~450,000,000 | 113,874,966 |
τ3 | 0~187,000 | 55,007 |
τ4 | 0~170,000 | 81,575 |
τ5 | 0~10,000 | 604 |
τ6 | 0~900,000,000 | 195,378,993 |
Parameter | Range | True Value |
---|---|---|
I | 0.01~110 | 76.8125 |
K | 1.4 × 10−13~1.4 × 10−19 | 9.1103 × 10−14 |
Vk | 0~4000 | 2941 |
Vc | 0~42,000 | 1087 |
Vo1 | 0~3000 | 697 |
Vo2 | 0~35,000 | 9232 |
Vo3 | 0~4000 | 3554 |
Vo4 | 0~70,000 | 8213 |
Vo5 | 0~70,000 | 34247 |
τ1 | 0~140,000 | 35186 |
τ2 | 0~450,000,000 | 151,985,257 |
τ3 | 0~187,000 | 7117 |
τ4 | 0~170,000 | 87,017 |
τ5 | 0~10,000 | 651 |
τ6 | 0~900,000,000 | 155,079,888 |
τ7 | 0~900,000,000 | 712,175,902 |
Parameter | Range | True Value |
---|---|---|
I | 0.01~110 | 82.75 |
K | 1.4 × 10−13~1.4 × 10−19 | 1.3061 × 10−13 |
Vk | 0~4000 | 2965 |
Vc | 0~42,000 | 1144 |
Vo1 | 0~3000 | 2456 |
Vo2 | 0~35,000 | 33,368 |
Vo3 | 0~4000 | 2632 |
Vo4 | 0~70,000 | 52,797 |
Vo5 | 0~70,000 | 27,897 |
τ1 | 0~140,000 | 139,951 |
τ2 | 0~450,000,000 | 210,499,733 |
τ3 | 0~187,000 | 2942 |
τ4 | 0~170,000 | 47,774 |
τ5 | 0~10,000 | 671 |
τ6 | 0~900,000,000 | 818,734,152 |
τ7 | 0~900,000,000 | 457,604,887 |
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Tan, S.-W.; Huang, S.-W.; Hsieh, Y.-Z.; Lin, S.-S. The Estimation Life Cycle of Lithium-Ion Battery Based on Deep Learning Network and Genetic Algorithm. Energies 2021, 14, 4423. https://doi.org/10.3390/en14154423
Tan S-W, Huang S-W, Hsieh Y-Z, Lin S-S. The Estimation Life Cycle of Lithium-Ion Battery Based on Deep Learning Network and Genetic Algorithm. Energies. 2021; 14(15):4423. https://doi.org/10.3390/en14154423
Chicago/Turabian StyleTan, Shih-Wei, Sheng-Wei Huang, Yi-Zeng Hsieh, and Shih-Syun Lin. 2021. "The Estimation Life Cycle of Lithium-Ion Battery Based on Deep Learning Network and Genetic Algorithm" Energies 14, no. 15: 4423. https://doi.org/10.3390/en14154423
APA StyleTan, S. -W., Huang, S. -W., Hsieh, Y. -Z., & Lin, S. -S. (2021). The Estimation Life Cycle of Lithium-Ion Battery Based on Deep Learning Network and Genetic Algorithm. Energies, 14(15), 4423. https://doi.org/10.3390/en14154423