Heo, J.S.; Choi, S.; Jo, J.-W.; Kang, J.; Park, H.-H.; Kim, Y.-H.; Park, S.K.
Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors. Materials 2017, 10, 612.
https://doi.org/10.3390/ma10060612
AMA Style
Heo JS, Choi S, Jo J-W, Kang J, Park H-H, Kim Y-H, Park SK.
Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors. Materials. 2017; 10(6):612.
https://doi.org/10.3390/ma10060612
Chicago/Turabian Style
Heo, Jae Sang, Seungbeom Choi, Jeong-Wan Jo, Jingu Kang, Ho-Hyun Park, Yong-Hoon Kim, and Sung Kyu Park.
2017. "Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors" Materials 10, no. 6: 612.
https://doi.org/10.3390/ma10060612
APA Style
Heo, J. S., Choi, S., Jo, J. -W., Kang, J., Park, H. -H., Kim, Y. -H., & Park, S. K.
(2017). Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors. Materials, 10(6), 612.
https://doi.org/10.3390/ma10060612