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Heo JS, Choi S, Jo J-W, Kang J, Park H-H, Kim Y-H, Park SK. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors. Materials. 2017; 10(6):612. https://doi.org/10.3390/ma10060612

Heo, Jae Sang, Seungbeom Choi, Jeong-Wan Jo, Jingu Kang, Ho-Hyun Park, Yong-Hoon Kim, and Sung Kyu Park. 2017. "Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors" Materials 10, no. 6: 612. https://doi.org/10.3390/ma10060612

Heo, J. S., Choi, S., Jo, J. -W., Kang, J., Park, H. -H., Kim, Y. -H., & Park, S. K. (2017). Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors. Materials, 10(6), 612. https://doi.org/10.3390/ma10060612