Convertino, C.; Zota, C.; Schmid, H.; Caimi, D.; Sousa, M.; Moselund, K.; Czornomaz, L.
InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities. Materials 2019, 12, 87.
https://doi.org/10.3390/ma12010087
AMA Style
Convertino C, Zota C, Schmid H, Caimi D, Sousa M, Moselund K, Czornomaz L.
InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities. Materials. 2019; 12(1):87.
https://doi.org/10.3390/ma12010087
Chicago/Turabian Style
Convertino, Clarissa, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund, and Lukas Czornomaz.
2019. "InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities" Materials 12, no. 1: 87.
https://doi.org/10.3390/ma12010087
APA Style
Convertino, C., Zota, C., Schmid, H., Caimi, D., Sousa, M., Moselund, K., & Czornomaz, L.
(2019). InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities. Materials, 12(1), 87.
https://doi.org/10.3390/ma12010087