Kurasaki, A.; Tanaka, R.; Sugisaki, S.; Matsuda, T.; Koretomo, D.; Magari, Y.; Furuta, M.; Kimura, M.
Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density. Materials 2019, 12, 3236.
https://doi.org/10.3390/ma12193236
AMA Style
Kurasaki A, Tanaka R, Sugisaki S, Matsuda T, Koretomo D, Magari Y, Furuta M, Kimura M.
Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density. Materials. 2019; 12(19):3236.
https://doi.org/10.3390/ma12193236
Chicago/Turabian Style
Kurasaki, Ayata, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Koretomo, Yusaku Magari, Mamoru Furuta, and Mutsumi Kimura.
2019. "Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density" Materials 12, no. 19: 3236.
https://doi.org/10.3390/ma12193236
APA Style
Kurasaki, A., Tanaka, R., Sugisaki, S., Matsuda, T., Koretomo, D., Magari, Y., Furuta, M., & Kimura, M.
(2019). Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density. Materials, 12(19), 3236.
https://doi.org/10.3390/ma12193236