Article Versions Notes

Zhou N, Li J, Mao H, Liu H, Liu J, Gao J, Xiang J, Hu Y, Shi M, Ju J, et al. The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O₂/He Plasmas for Thermopile Devices. Materials. 2020; 13(19):4278. https://doi.org/10.3390/ma13194278

Zhou, Na, Junjie Li, Haiyang Mao, Hao Liu, Jinbiao Liu, Jianfeng Gao, Jinjuan Xiang, Yanpeng Hu, Meng Shi, Jiaxin Ju, and et al. 2020. "The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O₂/He Plasmas for Thermopile Devices" Materials 13, no. 19: 4278. https://doi.org/10.3390/ma13194278

Zhou, N., Li, J., Mao, H., Liu, H., Liu, J., Gao, J., Xiang, J., Hu, Y., Shi, M., Ju, J., Lei, Y., Yang, T., Li, J., & Wang, W. (2020). The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O₂/He Plasmas for Thermopile Devices. Materials, 13(19), 4278. https://doi.org/10.3390/ma13194278