Nguyen, H.T.; Yamada, H.; Yamada, T.; Takahashi, T.; Shimizu, M.
Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods. Materials 2020, 13, 899.
https://doi.org/10.3390/ma13040899
AMA Style
Nguyen HT, Yamada H, Yamada T, Takahashi T, Shimizu M.
Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods. Materials. 2020; 13(4):899.
https://doi.org/10.3390/ma13040899
Chicago/Turabian Style
Nguyen, Huu Trung, Hisashi Yamada, Toshikazu Yamada, Tokio Takahashi, and Mitsuaki Shimizu.
2020. "Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods" Materials 13, no. 4: 899.
https://doi.org/10.3390/ma13040899
APA Style
Nguyen, H. T., Yamada, H., Yamada, T., Takahashi, T., & Shimizu, M.
(2020). Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods. Materials, 13(4), 899.
https://doi.org/10.3390/ma13040899