Article Versions Notes

Zhang L, Wang R, Liu Z, Cheng Z, Tong X, Xu J, Zhang S, Zhang Y, Chen F. Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD. Materials. 2021; 14(18):5339. https://doi.org/10.3390/ma14185339

Zhang, Lian, Rong Wang, Zhe Liu, Zhe Cheng, Xiaodong Tong, Jianxing Xu, Shiyong Zhang, Yun Zhang, and Fengxiang Chen. 2021. "Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD" Materials 14, no. 18: 5339. https://doi.org/10.3390/ma14185339

Zhang, L., Wang, R., Liu, Z., Cheng, Z., Tong, X., Xu, J., Zhang, S., Zhang, Y., & Chen, F. (2021). Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD. Materials, 14(18), 5339. https://doi.org/10.3390/ma14185339