Lee, H.-Y.; Liu, D.-S.; Chyi, J.-I.; Chang, E.Y.; Lee, C.-T.
Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array. Materials 2021, 14, 5474.
https://doi.org/10.3390/ma14195474
AMA Style
Lee H-Y, Liu D-S, Chyi J-I, Chang EY, Lee C-T.
Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array. Materials. 2021; 14(19):5474.
https://doi.org/10.3390/ma14195474
Chicago/Turabian Style
Lee, Hsin-Ying, Day-Shan Liu, Jen-Inn Chyi, Edward Yi Chang, and Ching-Ting Lee.
2021. "Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array" Materials 14, no. 19: 5474.
https://doi.org/10.3390/ma14195474
APA Style
Lee, H. -Y., Liu, D. -S., Chyi, J. -I., Chang, E. Y., & Lee, C. -T.
(2021). Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array. Materials, 14(19), 5474.
https://doi.org/10.3390/ma14195474