Article Versions Notes

Mukherjee K, De Santi C, Borga M, Geens K, You S, Bakeroot B, Decoutere S, Diehle P, Hübner S, Altmann F, et al. Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization. Materials. 2021; 14(9):2316. https://doi.org/10.3390/ma14092316

Mukherjee, Kalparupa, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Patrick Diehle, Susanne Hübner, Frank Altmann, and et al. 2021. "Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization" Materials 14, no. 9: 2316. https://doi.org/10.3390/ma14092316

Mukherjee, K., De Santi, C., Borga, M., Geens, K., You, S., Bakeroot, B., Decoutere, S., Diehle, P., Hübner, S., Altmann, F., Buffolo, M., Meneghesso, G., Zanoni, E., & Meneghini, M. (2021). Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization. Materials, 14(9), 2316. https://doi.org/10.3390/ma14092316