Article Versions Notes

Wei Z, Fu H, Yan X, Li S, Zhang L, Wei J, Liu S, Sun W, Wu W, Bai S. Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example. Materials. 2022; 15(2):457. https://doi.org/10.3390/ma15020457

Wei, Zhaoxiang, Hao Fu, Xiaowen Yan, Sheng Li, Long Zhang, Jiaxing Wei, Siyang Liu, Weifeng Sun, Weili Wu, and Song Bai. 2022. "Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example" Materials 15, no. 2: 457. https://doi.org/10.3390/ma15020457

Wei, Z., Fu, H., Yan, X., Li, S., Zhang, L., Wei, J., Liu, S., Sun, W., Wu, W., & Bai, S. (2022). Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example. Materials, 15(2), 457. https://doi.org/10.3390/ma15020457