Kim, D.-W.; Kim, H.-J.; Lee, W.-Y.; Kim, K.; Lee, S.-H.; Bae, J.-H.; Kang, I.-M.; Kim, K.; Jang, J.
Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field. Materials 2022, 15, 1943.
https://doi.org/10.3390/ma15051943
AMA Style
Kim D-W, Kim H-J, Lee W-Y, Kim K, Lee S-H, Bae J-H, Kang I-M, Kim K, Jang J.
Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field. Materials. 2022; 15(5):1943.
https://doi.org/10.3390/ma15051943
Chicago/Turabian Style
Kim, Do-Won, Hyeon-Joong Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, and Jaewon Jang.
2022. "Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field" Materials 15, no. 5: 1943.
https://doi.org/10.3390/ma15051943
APA Style
Kim, D. -W., Kim, H. -J., Lee, W. -Y., Kim, K., Lee, S. -H., Bae, J. -H., Kang, I. -M., Kim, K., & Jang, J.
(2022). Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field. Materials, 15(5), 1943.
https://doi.org/10.3390/ma15051943