Order Article Reprints

Kim D-W, Kim H-J, Lee W-Y, Kim K, Lee S-H, Bae J-H, Kang I-M, Kim K, Jang J. Enhanced Switching Reliability of Sol–Gel-Processed Y₂O₃ RRAM Devices Based on Y₂O₃ Surface Roughness-Induced Local Electric Field. Materials. 2022; 15(5):1943. https://doi.org/10.3390/ma15051943

Kim, Do-Won, Hyeon-Joong Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, and Jaewon Jang. 2022. "Enhanced Switching Reliability of Sol–Gel-Processed Y₂O₃ RRAM Devices Based on Y₂O₃ Surface Roughness-Induced Local Electric Field" Materials 15, no. 5: 1943. https://doi.org/10.3390/ma15051943

Kim, D. -W., Kim, H. -J., Lee, W. -Y., Kim, K., Lee, S. -H., Bae, J. -H., Kang, I. -M., Kim, K., & Jang, J. (2022). Enhanced Switching Reliability of Sol–Gel-Processed Y₂O₃ RRAM Devices Based on Y₂O₃ Surface Roughness-Induced Local Electric Field. Materials, 15(5), 1943. https://doi.org/10.3390/ma15051943