Shin, H.J.; Seo, H.K.; Lee, S.Y.; Park, M.; Park, S.-G.; Yang, M.K.
Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device. Materials 2022, 15, 2402.
https://doi.org/10.3390/ma15072402
AMA Style
Shin HJ, Seo HK, Lee SY, Park M, Park S-G, Yang MK.
Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device. Materials. 2022; 15(7):2402.
https://doi.org/10.3390/ma15072402
Chicago/Turabian Style
Shin, Hee Ju, Hyun Kyu Seo, Su Yeon Lee, Minsoo Park, Seong-Geon Park, and Min Kyu Yang.
2022. "Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device" Materials 15, no. 7: 2402.
https://doi.org/10.3390/ma15072402
APA Style
Shin, H. J., Seo, H. K., Lee, S. Y., Park, M., Park, S. -G., & Yang, M. K.
(2022). Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device. Materials, 15(7), 2402.
https://doi.org/10.3390/ma15072402