Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials 2024, 17, 679

Gong, Juntao; Wang, Weilei; Liu, Weili; Song, Zhitang

doi:10.3390/ma17133295

Open AccessCorrection

Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al₂O₃) Abrasive. Materials 2024, 17, 679

¹

National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

²

University of Chinese Academy of Sciences, No. 19, Yuquan Road, Shijingshan District, Beijing 100049, China

³

Shanghai Xinanna Electronic Technology Co., Ltd., Shanghai 201506, China

⁴

Zhejiang Xinchuangna Electronic Technology Co., Ltd., Haining 314406, China

^*

Authors to whom correspondence should be addressed.

Materials 2024, 17(13), 3295; https://doi.org/10.3390/ma17133295

Submission received: 12 June 2024 / Accepted: 14 June 2024 / Published: 4 July 2024

Download Versions Notes

In the original publication [1], there was an error regarding the affiliation for Juntao Gong. In addition to affiliation 1, the updated affiliations should include: “University of Chinese Academy of Sciences, No. 19, Yuquan Road, Shijingshan District, Beijing 100049, China”. The authors state that the scientific conclusions are unaffected. This correction was approved by the Academic Editor. The original publication has also been updated.

Reference

Gong, J.; Wang, W.; Liu, W.; Song, Z. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al₂O₃) Abrasive. Materials 2024, 17, 679. [Google Scholar] [CrossRef] [PubMed]

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© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

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MDPI and ACS Style

Gong, J.; Wang, W.; Liu, W.; Song, Z. Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al₂O₃) Abrasive. Materials 2024, 17, 679. Materials 2024, 17, 3295. https://doi.org/10.3390/ma17133295

AMA Style

Gong J, Wang W, Liu W, Song Z. Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al₂O₃) Abrasive. Materials 2024, 17, 679. Materials. 2024; 17(13):3295. https://doi.org/10.3390/ma17133295

Chicago/Turabian Style

Gong, Juntao, Weilei Wang, Weili Liu, and Zhitang Song. 2024. "Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al₂O₃) Abrasive. Materials 2024, 17, 679" Materials 17, no. 13: 3295. https://doi.org/10.3390/ma17133295

APA Style

Gong, J., Wang, W., Liu, W., & Song, Z. (2024). Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al₂O₃) Abrasive. Materials 2024, 17, 679. Materials, 17(13), 3295. https://doi.org/10.3390/ma17133295

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Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al₂O₃) Abrasive. Materials 2024, 17, 679

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