Colston, G.; Turner, K.; Renz, A.; Perera, K.; Gammon, P.M.; Antoniou, M.; Shah, V.A.
Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate. Materials 2024, 17, 1587.
https://doi.org/10.3390/ma17071587
AMA Style
Colston G, Turner K, Renz A, Perera K, Gammon PM, Antoniou M, Shah VA.
Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate. Materials. 2024; 17(7):1587.
https://doi.org/10.3390/ma17071587
Chicago/Turabian Style
Colston, Gerard, Kelly Turner, Arne Renz, Kushani Perera, Peter M. Gammon, Marina Antoniou, and Vishal A. Shah.
2024. "Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate" Materials 17, no. 7: 1587.
https://doi.org/10.3390/ma17071587
APA Style
Colston, G., Turner, K., Renz, A., Perera, K., Gammon, P. M., Antoniou, M., & Shah, V. A.
(2024). Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate. Materials, 17(7), 1587.
https://doi.org/10.3390/ma17071587
