Chen, S.-W.; Wang, Y.-S.; Hu, S.-Y.; Lee, W.-H.; Chi, C.-C.; Wang, Y.-L.
A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films. Materials 2012, 5, 377-384.
https://doi.org/10.3390/ma5030377
AMA Style
Chen S-W, Wang Y-S, Hu S-Y, Lee W-H, Chi C-C, Wang Y-L.
A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films. Materials. 2012; 5(3):377-384.
https://doi.org/10.3390/ma5030377
Chicago/Turabian Style
Chen, Sheng-Wen, Yu-Sheng Wang, Shao-Yu Hu, Wen-Hsi Lee, Chieh-Cheng Chi, and Ying-Lang Wang.
2012. "A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films" Materials 5, no. 3: 377-384.
https://doi.org/10.3390/ma5030377
APA Style
Chen, S.-W., Wang, Y.-S., Hu, S.-Y., Lee, W.-H., Chi, C.-C., & Wang, Y.-L.
(2012). A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films. Materials, 5(3), 377-384.
https://doi.org/10.3390/ma5030377